Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

被引：275

作者：

Schindler, C. ^{[1
,2
]}

Staikov, G. ^{[1
,2
]}

Waser, R. ^{[1
,2
,3
]}

机构：

[1] Forschungszentrum Julich, Inst IFF, D-52425 Julich, Germany

[2] Julich Aachen Res Alliance, D-52425 Julich, Germany

[3] Univ Aachen, Rhein Westfal TH Aachen, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期

关键词：

copper; electrochemical electrodes; integrated circuit metallisation; iridium; platinum; random-access storage; silicon compounds; thin films;

D O I：

10.1063/1.3077310

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The kinetics of the switching process in Cu-SiO2-based electrochemical metallization memory cells was investigated as a function of the switching voltage and the SiO2 film thickness. We observe an exponential dependence of the switching rate on the switching voltage and no significant thickness dependence in the range from 5 to 20 nm SiO2. We conclude from our data that the cathodic electrodeposition represents the rate-limiting step of the switching kinetics. The voltage-time dilemma seems to be overcome by the exponential dependence of the switching rate in combination with a threshold voltage presumably originating from a nucleation overpotential.

引用

页数：3

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