The effects of annealing on the structures and electrical conductivities of fullerene-derived nanowires

被引:10
作者
Guo, YG
Wan, LJ [1 ]
Li, CJ
Chen, DM
Wang, C
Wang, CR
Bai, CL
Wang, YG
机构
[1] Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
[2] Harvard Univ, Rowland Inst Harvard, Cambridge, MA 02142 USA
[3] Chinese Acad Sci, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
[4] Chinese Acad Sci, Grad Sch, Beijing 100064, Peoples R China
关键词
D O I
10.1039/b311449j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have succeeded in fusing C-60 clusters into one-dimensional nanowires by electrophoretic deposition using porous anodic aluminium oxide (AAO) membranes as templates. The C-60 clusters are introduced through a dc electric field and polymerized in the channels. Here we present the results on the effects of annealing on the structures and electrical conductivities of the fullerene-derived nanowires. By changing the annealing temperature we found that the grain sizes became large at 523 K and 673 K while damaged to amorphous carbon resulted at 823 K, as determined by Fourier transform infrared (FTIR) absorption spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The measurements of their electrical conductivities show their semiconducting behavior with resistance varied by more than two orders of magnitude after annealing.
引用
收藏
页码:914 / 918
页数:5
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