Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

被引：50

作者：

Calvet, LE

Luebben, H

Reed, MA

Wang, C

Snyder, JP

Tucker, JR

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[3] Peripheral Imaging Corp, San Jose, CA 95134 USA

[4] Spinnaker Semicond, Minneapolis, MN 55455 USA

[5] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 02期

关键词：

D O I：

10.1063/1.1425074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling. (C) 2002 American Institute of Physics.

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收藏

页码：757 / 759

页数：3

相关论文

共 15 条

[1] NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING [J].

HARELAND, SA ;

TASCH, AF ;

MAZIAR, CM .

ELECTRONICS LETTERS, 1993, 29 (21) :1894-1896

[2] Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm [J].

Huang, CK ;

Zhang, WE ;

Yang, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :842-848

[3] Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model [J].

Ieong, M ;

Solomon, PM ;

Laux, SE ;

Wong, HSP ;

Chidambarrao, D .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :733-736

[4] The leakage current improvement in an ultrashallow junction NMOS with Co silicided source and drain [J].

Kang, WT ;

Kim, JS ;

Lee, KY ;

Shin, YC ;

Kim, TH ;

Park, YJ ;

Park, JW .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (01) :9-11

[5]

Koeneke C. J., 1981, International Electron Devices Meeting, P367

[6] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].

LEPSELTE.MP ;

SZE, SM .

BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+

[7] SB-IGFET - AN INSULATED-GATE FIELD-EFFECT TRANSISTOR USING SCHOTTKY BARRIER CONTACTS FOR SOURCE AND DRAIN [J].

LEPSELTER, MP ;

SZE, SM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (08) :1400-+

[8] An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate [J].

Rishton, SA ;

Ismail, K ;

Chu, JO ;

Chan, K .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :361-363

[9] 35 nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate [J].

Saitoh, W ;

Yamagami, S ;

Itoh, A ;

Asada, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (6AB) :L629-L631

[10] Analysis of the potential distribution in the channel region of a platinum silicided source drain metal oxide semiconductor field effect transistor [J].

Snyder, JP ;

Helms, CR ;

Nishi, Y .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3407-3409