Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

被引：60

作者：

Huang, CK ^{[1
]}

Zhang, WE ^{[1
]}

Yang, CH ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

MOSFET; scaling; ultrasmall;

D O I：

10.1109/16.662789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present simulation results of a silicon-based metal-oxide-semiconductor field effect transistors (MOSFET), which has a structure similar to that of a conventional MOSFET, but the source and drain regions are now entirely replaced by metals, Bg using abrupt metal/silicon Schottky junctions, short-channel effects are avoided, Based on a few commonly used physical assumptions, we have calculated the transistor characteristics, and me find that this new three-terminal transistor can offer gain and impedance isolation, desirable for logic circuit applications.

引用

页码：842 / 848

页数：7

共 22 条

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