Fabrication and performance of a flat piezoelectric cantilever obtained using a sol-gel derived PZT thick film deposited on a SOI wafer

被引：17

作者：

Kobayashi, T ^{[1
]}

Tsaur, J ^{[1
]}

Ichiki, M ^{[1
]}

Maeda, R ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan

来源：

SMART MATERIALS AND STRUCTURES | 2006年 / 15卷 / 01期

关键词：

D O I：

10.1088/0964-1726/15/1/022

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The present paper reports on the fabrication and performance of flat piezoelectric cantilevers obtained using a sol-gel derived PZT thick film deposited on a SOI (semiconductor-on-insulator) wafer. Highly (100) oriented PZT thick films (2.7 mu m) have been deposited onto the SOI wafer with a Pt/Ti layer and an SiO2 layer (Pt/Ti/SiO2/Si/SiO2/Si multi-layered structure hereafter) by the sol-gel technique. The upper SiO2 layer between the Pt/Ti bottom electrode and upper Si layer was found to play an important role in avoiding breaking the Pt/Ti bottom electrode. The dielectric constant and the remanant polarization of the deposited PZT films were measured as 1250 and 17 mu C cm(-2) respectively. The transverse piezoelectric constant (-d(31)) estimated from these data is 117 pC N-1. After coating the Pt/Ti top electrode on the PZT layer, microfabrication techniques were used on the Pt/Ti/PZT/Pt/Ti/SiO2/Si/SiO2/Si multi-layered structures to form piezoelectric cantilevers. The resulting cantilevers composed of Pt/Ti/PZT/Pt/Ti/SiO2/Si multi-layered structures were found to be flat. The transverse piezoelectric constant (-d(31)) of the PZT thick films calculated from the measured displacement of the cantilevers is 84-132 pC N-1. The present data are 4-5 times larger than our previous data. This may be due to low stress in the PZT thick film achieved by using the Si layer of the Pt/Ti/SiO2/Si/SiO2/Si multi-layered structure as a Structural material.

引用

页码：S137 / S140

页数：4

共 11 条

[1] Theoretical calculations and performance results of a PZT thin film actuator [J].

Hoffmann, M ;

Küppers, H ;

Schneller, T ;

Böttger, U ;

Schnakenberg, U ;

Mokwa, W ;

Waser, R .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2003, 50 (10) :1240-1246

[2] Deposition and patterning technique for realization of Pb(Zr0.52,Ti0.48)O3 thick film micro actuator [J].

Maeda, R ;

Wang, ZJ ;

Chu, JR ;

Akedo, J ;

Ichiki, M ;

Yonekubo, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :7116-7119

[3]

NGUYEN NT, 2002, FUNDAMENTALS APPL MI, P272

[4] Integrated silica micro-opto-electromechanical steering device for laser beam scanning [J].

Petroz, K ;

Ollier, E ;

Grateau, H ;

Mottier, P .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 73 (1-2) :117-121

[5] Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners [J].

Schroth, A ;

Lee, C ;

Matsumoto, S ;

Maeda, R .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 73 (1-2) :144-152

[6] Thermally actuated optical microscanner with large angle and low consumption [J].

Schweizer, S ;

Calmes, S ;

Laudon, M ;

Renaud, P .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :470-477

[7] THE CONSTITUENT EQUATIONS OF PIEZOELECTRIC HETEROGENEOUS BIMORPHS [J].

SMITS, JG ;

CHOI, WS .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (03) :256-270

[8] Electrostatic micro torsion mirrors for an optical switch matrix [J].

Toshiyoshi, H ;

Fujita, H .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1996, 5 (04) :231-237

[9] Preparation and application of lead zirconate titanate (PZT) films deposited by hybrid process: Sol-gel method and laser ablation [J].

Tsaur, J ;

Wang, ZJ ;

Zhang, LL ;

Ichiki, M ;

Wan, JW ;

Maeda, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :6664-6668

[10] Phase-only micromirror array fabricated by standard CMOS process [J].

Tuantranont, A ;

Liew, LA ;

Bright, VM ;

Zhang, WG ;

Lee, YC .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 89 (1-2) :124-134

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