Fabrication and performance of a flat piezoelectric cantilever obtained using a sol-gel derived PZT thick film deposited on a SOI wafer

被引:17
作者
Kobayashi, T [1 ]
Tsaur, J [1 ]
Ichiki, M [1 ]
Maeda, R [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan
关键词
D O I
10.1088/0964-1726/15/1/022
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The present paper reports on the fabrication and performance of flat piezoelectric cantilevers obtained using a sol-gel derived PZT thick film deposited on a SOI (semiconductor-on-insulator) wafer. Highly (100) oriented PZT thick films (2.7 mu m) have been deposited onto the SOI wafer with a Pt/Ti layer and an SiO2 layer (Pt/Ti/SiO2/Si/SiO2/Si multi-layered structure hereafter) by the sol-gel technique. The upper SiO2 layer between the Pt/Ti bottom electrode and upper Si layer was found to play an important role in avoiding breaking the Pt/Ti bottom electrode. The dielectric constant and the remanant polarization of the deposited PZT films were measured as 1250 and 17 mu C cm(-2) respectively. The transverse piezoelectric constant (-d(31)) estimated from these data is 117 pC N-1. After coating the Pt/Ti top electrode on the PZT layer, microfabrication techniques were used on the Pt/Ti/PZT/Pt/Ti/SiO2/Si/SiO2/Si multi-layered structures to form piezoelectric cantilevers. The resulting cantilevers composed of Pt/Ti/PZT/Pt/Ti/SiO2/Si multi-layered structures were found to be flat. The transverse piezoelectric constant (-d(31)) of the PZT thick films calculated from the measured displacement of the cantilevers is 84-132 pC N-1. The present data are 4-5 times larger than our previous data. This may be due to low stress in the PZT thick film achieved by using the Si layer of the Pt/Ti/SiO2/Si/SiO2/Si multi-layered structure as a Structural material.
引用
收藏
页码:S137 / S140
页数:4
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