Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

被引：12

作者：

Hung, CC ^{[1
]}

Lee, YJ

Kao, MJ

Wang, YH

Huang, RF

Chen, WC

Chen, YSY

Shen, KH

Tsai, MJ

Lin, WC

Tang, DDL

Chao, S

机构：

[1] ITRI, Elect Res & Serv Org, Hsinchu 310, Taiwan

[2] Taiwan Semicond Mfg Co, Hsinchu 310, Taiwan

[3] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 310, Taiwan

[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2181628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, a writing scheme with preceding negative pulse wave form for toggle magnetic random access memory (MRAM) is proposed to enhance the switching yield and enable a low current switching. The failure mechanism of toggle switching is studied by micromagnetic analysis. As a result of broadened operation window and reduced switching current, the scalability of MRAM is feasible with the robust toggle operation. (c) 2006 American Institute of Physics.

引用

页数：3

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