Spectroscopic identification and direct imaging of interfacial magnetic spins -: art. no. 247201

被引：192

作者：

Ohldag, H

Regan, TJ

Stöhr, J

Scholl, A

Nolting, F

Lüning, J

Stamm, C

Anders, S

White, RL

机构：

[1] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[5] Univ Dusseldorf, Inst Angew Phys, D-40225 Dusseldorf, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.87.247201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using x-ray absorption spectromicroscopy we have imaged the uncompensated spins induced at the surface of antiferromagnetic (AFM) NiO(100) by deposition of ferromagnetic (FM) Co. These spins align parallel to the AFM spins in NiO(100) and align the FM spins in Co. The uncompensated interfacial spins arise from an ultrathin CoNiOx layer that is formed upon Co deposition through reduction of the NiO surface. The interfacial Ni spins are discussed in terms of the "uncompensated spins" at AFM/FM interfaces long held responsible for coercivity increases and exchange bias. We find a direct correlation between their number and the size of the coercivity.

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共 21 条

[11] Exchange bias [J].

Nogués, J ;

Schuller, IK .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 192 (02) :203-232

[12] Spin reorientation at the antiferromagnetic NiO(001) surface in response to an adjacent ferromagnet [J].

Ohldag, H ;

Scholl, A ;

Nolting, F ;

Anders, S ;

Hillebrecht, FU ;

Stöhr, J .

PHYSICAL REVIEW LETTERS, 2001, 86 (13) :2878-2881

[13] Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As [J].

Ohldag, H ;

Solinus, V ;

Hillebrecht, FU ;

Goedkoop, JB ;

Finazzi, M ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2928-2930

[14] Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].

Ohno, Y ;

Young, DK ;

Beschoten, B ;

Matsukura, F ;

Ohno, H ;

Awschalom, DD .

NATURE, 1999, 402 (6763) :790-792

[15] Device physics - Magnetoelectronics [J].

Prinz, GA .

SCIENCE, 1998, 282 (5394) :1660-1663

[16] Chemical effects at metal/oxide interfaces studied by x-ray-absorption spectroscopy -: art. no. 214422 [J].

Regan, TJ ;

Ohldag, H ;

Stamm, C ;

Nolting, F ;

Lüning, J ;

Stöhr, J ;

White, RL .

PHYSICAL REVIEW B, 2001, 64 (21)

[17] Consequences of spin-flop coupling in exchange biased films [J].

Schulthess, TC ;

Butler, WH .

PHYSICAL REVIEW LETTERS, 1998, 81 (20) :4516-4519

[18] Magnetic extended x-ray absorption fine structure at the L3,2 edges of Fe and Co on Cu(001) [J].

Srivastava, P ;

Lemke, L ;

Wende, H ;

Chauvistré, R ;

Haack, N ;

Baberschke, K ;

Hunter-Dunn, J ;

Arvanitis, D ;

Mårtensson, N ;

Ankudinov, A ;

Rehr, JJ .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :7025-7027

[19] Principles of X-ray magnetic dichroism spectromicroscopy [J].

Stöhr, J ;

Padmore, HA ;

Anders, S ;

Stammler, T ;

Scheinfein, MR .

SURFACE REVIEW AND LETTERS, 1998, 5 (06) :1297-1308

[20] Images of the antiferromaguetic structure of a NiO(100) surface by means of X-ray magnetic linear dichroism spectromicroscopy [J].

Stöhr, J ;

Scholl, A ;

Regan, TJ ;

Anders, S ;

Lüning, J ;

Scheinfein, MR ;

Padmore, HA ;

White, RL .

PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1862-1865