Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

被引：21

作者：

Jia, Caihong ^{[1
]}

Chen, Yonghai ^{[1
]}

Liu, Genhua ^{[1
]}

Liu, Xianglin ^{[1
]}

Yang, Shaoyan ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 311卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Growth behavior; SrTiO3; MOCVD; ZnO;

D O I：

10.1016/j.jcrysgro.2008.10.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：200 / 204

页数：5

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