Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions

被引：22

作者：

Wu, Yunlong ^{[1
]}

Zhang, Liuwan ^{[1
]}

Xie, Guanlin ^{[1
]}

Zhu, Jia-Lin ^{[1
]}

Chen, Yonghai ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Phys, Adv Mat Lab, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1063/1.2831913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(110) ZnO/(001) Nb-1 wt %-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (C) 2008 American Institute of Physics.

引用

页数：3

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