Schottky diode with Ag on (11(2)over-bar0) epitaxial ZnO film

被引：167

作者：

Sheng, H ^{[1
]}

Muthukumar, S ^{[1
]}

Emanetoglu, NW ^{[1
]}

Lu, Y ^{[1
]}

机构：

[1] Rutgers State Univ, Sch Engn, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1463700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silver Schottky contacts were fabricated on (11 (2) over bar0) n-ZnO epilayers, which were grown on R-plane sapphire substrates by metalorganic chemical-vapor deposition. The flatband barrier height was determined to be 0.89 and 0.92 eV by current-voltage and capacitance-voltage measurements, respectively. The ideality factor was found to be 1.33. (C) 2002 American Institute of Physics.

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页码：2132 / 2134

页数：3

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