InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability

被引：3

作者：

Bekaert, J ^{[1
]}

Moshchalkov, VV

Bruynseraede, Y

Behet, M

De Boeck, J

Borghs, G

机构：

[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1999年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.1149834

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Cross-shaped Hall sensors with high sensitivity and excellent temperature stability were fabricated from quantum wells based on an InAs/Al0.2Ga0.8Sb heterostructure. The layers were grown on semi-insulating GaAs substrates by molecular beam epitaxy. Maximum Hall mobilities of 215 000 cm(2)/V s with sheet carrier concentrations of 9 x 10(11) cm(-2) were measured at 4.2 K for an undoped quantum well structure. These transport properties result in sensitivities as high as 3 T-1 (for voltage drive) and 650 Omega/T (for current drive). Additional Si delta doping in the middle of the InAs quantum well leads to a highly improved temperature stability of the sensitivities. (C) 1999 American Institute of Physics. [S0034-6748(99)03306-7].

引用

页码：2715 / 2718

页数：4

共 11 条

[1] Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications
Behet, M
Nemeth, S
De Boeck, J
Borghs, G
Tummler, J
Woitok, J
Geurts, J
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (04) : 428 - 432
[2] BEHET M, IN PRESS SENS ACTUAT
[3] WELL WIDTH DEPENDENCE OF ELECTRON-TRANSPORT IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS/ALSB QUANTUM-WELLS
BOLOGNESI, CR
KROEMER, H
ENGLISH, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 877 - 879
[4] Transport properties governed by surface barriers in Bi2Sr2CaCu2O8
Fuchs, DT
Zeldov, E
Rappaport, M
Tamegai, T
Ooi, S
Shtrikman, H
[J]. NATURE, 1998, 391 (6665) : 373 - 376
[5] Ballistic Hall micromagnetometry
Geim, AK
Dubonos, SV
Lok, JGS
Grigorieva, IV
Maan, JC
Hansen, LT
Lindelof, PE
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2379 - 2381
[6] Diffusive transport in a Hall junction with a microinhomogeneous magnetic field
Ibrahim, IS
Schweigert, VA
Peeters, FM
[J]. PHYSICAL REVIEW B, 1998, 57 (24) : 15416 - 15427
[7] Hybrid hall effect device
Johnson, M
Bennett, BR
Yang, MJ
Miller, MM
Shanabrook, BV
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (07) : 974 - 976
[8] Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD
Lee, JS
Ahn, KH
Jeong, YH
Kim, DM
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1996, 57 (03) : 183 - 185
[9] Real-time scanning hall probe microscopy
Oral, A
Bending, SJ
Henini, M
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1324 - 1326
[10] Hall magnetometer in the ballistic regime
Peeters, FM
Li, XQ
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (05) : 572 - 574

← 1 2 →