High rate sputter deposition of TiO2 from TiO2-x target

被引:34
作者
Ohsaki, H [1 ]
Tachibana, Y [1 ]
Hayashi, A [1 ]
Mitsui, A [1 ]
Hayashi, Y [1 ]
机构
[1] Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan
关键词
sputtering; titanium oxide;
D O I
10.1016/S0040-6090(99)00207-2
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
A new sputter technique for high rate deposition of TiO2 was developed for applying to common planar magnetron sputter system. With this technique, using plasma sprayed TiO2-x targets and a sputter gas of a few percent of O-2 diluted with Ar, TiO2 films are deposited with a high deposition rate efficiency (deposition rate per applied power density) being almost eight times larger than that of the conventional sputter method using Ti target and O-2 sputter gas. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:57 / 60
页数:4
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