Trap states and transport characteristics in picene thin film field-effect transistor

被引：78

作者：

Kawasaki, Naoko ^{[1
]}

Kubozono, Yoshihiro ^{[1
]}

Okamoto, Hideki ^{[2
]}

Fujiwara, Akihiko ^{[3
]}

Yamaji, Minoru ^{[4
]}

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan

[3] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan

[4] Gunma Univ, Dept Chem & Biol Chem, Kiryu, Gunma 3768515, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

hole density; hole mobility; organic compounds; organic field effect transistors; semiconductor device models; thin film transistors; ELECTRONIC TRANSPORT; SINGLE-CRYSTALS;

D O I：

10.1063/1.3076124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O-2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O-2-exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility mu and on-off ratio. We also found that the O-2-exposure never caused an increase in hole carrier density. Actually, a very high mu value of 3.2 cm(2) V-1 s(-1) is realized under 500 Torr of O-2.

引用

页数：3

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