Design and fabrication of metal bolometers on high porosity silicon layers

被引:7
作者
Boarino, L
Monticone, E
Amato, G
Steni, R
Benedetto, G
Rossi, AM
Lacquaniti, V
Spagnolo, R
Lysenko, V
Dittmar, A
机构
[1] Ist Elettrotecn Nazl Galileo Ferraris, Thin Film Lab, I-10135 Turin, Italy
[2] Inst Natl Sci Appl, Phys Mat Lab, CNRS, UMR 5511, F-69621 Villeurbanne, France
关键词
metal bolometers; FEM thermal analysis; p-type porous silicon (PS);
D O I
10.1016/S0026-2692(99)00078-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fabrication and characterisation of metal bolometers on p-type porous silicon (PS) layers are presented as an alternative to more complex micromachining processes for thermal insulation of sensors. A comparison of Nb strips deposited on layers of PS of varying thicknesses and porosities and on other substrates such as amorphous glass and crystalline silicon is described. Results of electrical characterisation, photoacoustic depth profiling and FEM thermal analysis are presented. Photoacoustic investigation on very high porosity layers (greater than or equal to 90%) gives promising indications on the thermal insulation efficiency of thin PS layers, which could be competitive with suspended structures for their low cost and number of fabrication steps. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1149 / 1154
页数:6
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