Control of the electric and magnetic properties of ZnO films

被引：17

作者：

Tabata, H ^{[1
]}

Saeki, M ^{[1
]}

Guo, SL ^{[1
]}

Choi, JH ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, ISIR Sanken, Ibaraki, Osaka 5670047, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷 / 308-310期

关键词：

ZnO; laser MBE; thin films transistor;

D O I：

10.1016/S0921-4526(01)00861-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have demonstrated a possibility of the growth of p-type ZnO films by a pulsed laser deposition technique combined with a plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an ECR or RF plasma source. N2O gas is effective in preventing ''O'' vacancies from occurring and introducing "N" as an acceptor, at the same time. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well-crystallized growth at low temperature. This non-equilibrium film formation process enables us to produce other new ZnO films which show ferromagnetic properties which means that a transparent magnet is realized with this technique. These various types of ZnO films will open the door for practical applications in various oxide electronic devices. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：993 / 998

页数：6

共 19 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[3] Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Sekiuchi, T ;

Yao, T ;

Segawa, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1514-1517

[4] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].

Cho, SL ;

Ma, J ;

Kim, YK ;

Sun, Y ;

Wong, GKL ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763

[5] GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere [J].

Dinescu, M ;

Verardi, P ;

Boulmer-Leborgne, C ;

Gerardi, C ;

Mirenghi, L ;

Sandu, V .

APPLIED SURFACE SCIENCE, 1998, 127 :559-563

[6] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].

Guo, XL ;

Choi, JH ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L177-L180

[7] Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition [J].

Hayamizu, S ;

Tabata, H ;

Tanaka, H ;

Kawai, T .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :787-791

[8] Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation [J].

Hiramatsu, M ;

Imaeda, K ;

Horio, N ;

Nawata, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02) :669-673

[9] Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2534-2536

[10] Fabrication of the low-resistive p-type ZnO by codoping method [J].

Joseph, M ;

Tabata, H ;

Saeki, H ;

Ueda, K ;

Kawai, T .

PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148

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