Remarkable Mobility Increase and Threshold Voltage Reduction in Organic Field-Effect Transistors by Overlaying Discontinuous Nano-Patches of Charge-Transfer Doping Layer on Top of Semiconducting Film

被引:60
作者
Kim, Jong H. [1 ,2 ]
Yun, Sun Woo [1 ,2 ]
An, Byeong-Kwan [3 ]
Han, Yoon Deok [4 ]
Yoon, Seong-Jun [1 ,2 ]
Joo, Jinsoo [4 ]
Park, Soo Young [1 ,2 ]
机构
[1] Seoul Natl Univ, Ctr Supramol Optoelect Mat, Seoul 151744, South Korea
[2] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea
[3] Catholic Univ Korea, Dept Chem, Bucheon Si 420753, Geyonggi Do, South Korea
[4] Korea Univ, Dept Phys, Seoul 136713, South Korea
基金
新加坡国家研究基金会;
关键词
organic field-effect transistors; charge-transfer doping; activation energy; N-CHANNEL; PENTACENE; TRANSPORT; HETEROJUNCTION; PERFORMANCE; TEMPERATURE; OPERATION; DEPLETION; AMBIPOLAR; COMPLEX;
D O I
10.1002/adma.201202789
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An effective strategy for significantly increasing the organic transistor mobility with simultaneous reduction of the threshold voltage utilizing discontinuous nano-patches of charge-transfer doping layer is demonstrated. By overlaying the nano-patches on top of a given semiconducting film, mobility and threshold voltage of p-type pentacene are remarkably improved to 4.52 cm 2 V-1s-1 and -0.4 V, and those of n-type Hex-4-TFPTA are also improved to 2.57 cm2 V-1s -1 and 4.1 V. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:719 / 724
页数:6
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