Multilayer bipolar field-effect transistors

被引：26

作者：

Cho, Shinuk ^{[1
]}

Yuen, Jonathan ^{[1
]}

Kim, Jin Young ^{[1
]}

Lee, Kwanghee ^{[1
,3
]}

Heeger, Alan J. ^{[1
]}

Lee, Sangyun ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[2] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea

[3] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.2816913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer. (C) 2008 American Institute of Physics.

引用

页数：3

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