High-mobility ambipolar transport in organic light-emitting transistors

被引：203

作者：

Dinelli, Franco

Capelli, Raffaella

Loi, Maria A.

Murgia, Mauro

Muccini, Michele

Facchetti, Antonio

Marks, Tobin J.

机构：

[1] CNR, ISMN, I-40129 Bologna, Italy

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1002/adma.200502164

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic light-emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 x 10(-2) cm(2) V-1 s(-1). The best performances are realized by sequentially depositing alpha,omega-dihexyl-quaterthiophene (DH4T) as p-type and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as n-type materials. Laser-scanning confocal microscopy allows selective imaging of the layers.

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页码：1416 / +

页数：6

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