Multilayer bipolar field-effect transistors

被引:26
作者
Cho, Shinuk [1 ]
Yuen, Jonathan [1 ]
Kim, Jin Young [1 ]
Lee, Kwanghee [1 ,3 ]
Heeger, Alan J. [1 ]
Lee, Sangyun [2 ]
机构
[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[2] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
[3] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea
关键词
D O I
10.1063/1.2816913
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer. (C) 2008 American Institute of Physics.
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页数:3
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