Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

被引：68

作者：

Kuwahara, E ^{[1
]}

Kubozono, Y

Hosokawa, T

Nagano, T

Masunari, K

Fujiwara, A

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi 3220012, Japan

[3] Japan Inst Sci & Technol, Ishikawa 9231292, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1818336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C-60 and pentacene. Three types of device structures in the C-60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C-60 and pentacene, the mobility mu in p-channel operation was estimated to be 6.8x10(-2) cm(2) V-1 s(-1), while the mu in n-channel operation was 1.3x10(-3) cm(2) V-1 s(-1). This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design. (C) 2004 American Institute of Physics.

引用

页码：4765 / 4767

页数：3

共 17 条

[1] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS [J].