Theoretical study of phase separation in wurtzite InGaN

被引:11
作者
Zheng, Jianghai [1 ]
Kang, Junyong [1 ]
机构
[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
phase separation; defects; ab initio calculation;
D O I
10.1016/j.mssp.2006.01.014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phase separation in wurtzite InxGa1-xN is investigated theoretically by ab initio calculations. The calculated mixing free energies are positive with a maximum at composition x = 0.4375 and the spinodal decomposition will occur while the lattice is in equilibrium and uniformity. The mixing free energies turn into negative and have three retuse minima at compositions of 0.3125, 0.5000, and 0.6875 if strain is introduced by replacing the GaN or InN lattice constant with the equilibrium lattice constants. Detailed comparisons among the clustered, phase-separated, and uniform atomic configurations show that InN cluster is favourable in energy if the lattice is further fully relaxed, but uniform distribution is kept on under the strained lattices. The results indicate that the phase separation can be suppressed under either the compressive or tensile stress field. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:341 / 344
页数:4
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