Non-volatile magnetic random access memories (MRAM)

被引：68

作者：

Sousa, RC ^{[1
]}

Prejbeanu, IL ^{[1
]}

机构：

[1] CEA, CNRS, Spintec, URA 2512, F-38054 Grenoble, France

来源：

COMPTES RENDUS PHYSIQUE | 2005年 / 6卷 / 09期

关键词：

MRAM; non-volatile; magnetic tunnel junction; memory;

D O I：

10.1016/j.crhy.2005.10.007

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges. Special emphasis is placed on bit write strategies and their respective scaling perspectives. To cite this article: R.C Sousa, LL. Prejbeanu, C R. Physique 6 (2005). (c) 2005 Academie des sciences. Published by Elsevier SAS. All rights reserved.

引用

页码：1013 / 1021

页数：9

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