Modelling of threshold voltage with non-uniform substrate doping

被引：11

作者：

Lim, KY ^{[1
]}

Zhou, X ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/SMELEC.1998.781144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytical threshold voltage equation for modelling non-uniform channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of non-uniform doping profiles with a simple, empirical parameter extraction.

引用

页码：27 / 31

页数：5

共 6 条

[1] CALCULATION OF THRESHOLD VOLTAGE IN NONUNIFORMLY DOPED MOSFETS [J].

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :303-307

[2] SEMIEMPIRICAL MODEL FOR THE THRESHOLD VOLTAGE OF A DOUBLE IMPLANTED MOSFET AND ITS TEMPERATURE-DEPENDENCE [J].

ARORA, ND .

SOLID-STATE ELECTRONICS, 1987, 30 (05) :559-569

[3] Modelling and characterization of non-uniform substrate doping [J].

Lallement, C ;

Bucher, M ;

Enz, C .

SOLID-STATE ELECTRONICS, 1997, 41 (12) :1857-1861

[4]

LIM KY, 1998, 1998 HONG KONG EL DE

[5] A NEW APPROACH TO THE MODELING OF NONUNIFORMLY DOPED SHORT-CHANNEL MOSFETS [J].

RATNAM, P ;

SALAMA, CAT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1289-1298

[6]

Zhang WL, 1997, 1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, P39, DOI 10.1109/HKEDM.1997.642326

← 1 →