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SEMIEMPIRICAL MODEL FOR THE THRESHOLD VOLTAGE OF A DOUBLE IMPLANTED MOSFET AND ITS TEMPERATURE-DEPENDENCE
被引:30
作者
:
ARORA, ND
论文数:
0
引用数:
0
h-index:
0
机构:
Digital Equipment Corp, Hudson, MA,, USA, Digital Equipment Corp, Hudson, MA, USA
ARORA, ND
机构
:
[1]
Digital Equipment Corp, Hudson, MA,, USA, Digital Equipment Corp, Hudson, MA, USA
来源
:
SOLID-STATE ELECTRONICS
|
1987年
/ 30卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(87)90212-7
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
25
引用
收藏
页码:559 / 569
页数:11
相关论文
共 25 条
[1]
A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
AKERS, LA
BEGUWALA, MME
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
BEGUWALA, MME
CUSTODE, FZ
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
CUSTODE, FZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(12)
: 1490
-
1495
[2]
THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
AKERS, LA
SANCHEZ, JJ
论文数:
0
引用数:
0
h-index:
0
SANCHEZ, JJ
[J].
SOLID-STATE ELECTRONICS,
1982,
25
(07)
: 621
-
641
[3]
CALCULATION OF THRESHOLD VOLTAGE IN NONUNIFORMLY DOPED MOSFETS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(03)
: 303
-
307
[4]
GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
FICHTNER, W
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(01):
: 2
-
4
[5]
THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
: 1696
-
1710
[6]
DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET
CHAO, CS
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
CHAO, CS
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
AKERS, LA
PATTANAYAK, DN
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
PATTANAYAK, DN
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(09)
: 851
-
860
[7]
A DYNAMIC AVERAGE MODEL FOR THE BODY EFFECT IN ION-IMPLANTED SHORT CHANNEL (L=1MU-META) MOSFETS
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
CHATTERJEE, PK
LEISS, JE
论文数:
0
引用数:
0
h-index:
0
LEISS, JE
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
TAYLOR, GW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(05)
: 606
-
607
[8]
DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436
[9]
MEASUREMENT OF MOSFET CONSTANTS
DELAMONEDA, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
DELAMONEDA, FH
KOTECHA, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
KOTECHA, HN
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
SHATZKES, M
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(01):
: 10
-
12
[10]
DEVICE MODELING
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
ENGL, WL
DIRKS, HK
论文数:
0
引用数:
0
h-index:
0
DIRKS, HK
MEINERZHAGEN, B
论文数:
0
引用数:
0
h-index:
0
MEINERZHAGEN, B
[J].
PROCEEDINGS OF THE IEEE,
1983,
71
(01)
: 10
-
33
←
1
2
3
→
共 25 条
[1]
A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
AKERS, LA
BEGUWALA, MME
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
BEGUWALA, MME
CUSTODE, FZ
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803
CUSTODE, FZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(12)
: 1490
-
1495
[2]
THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
AKERS, LA
SANCHEZ, JJ
论文数:
0
引用数:
0
h-index:
0
SANCHEZ, JJ
[J].
SOLID-STATE ELECTRONICS,
1982,
25
(07)
: 621
-
641
[3]
CALCULATION OF THRESHOLD VOLTAGE IN NONUNIFORMLY DOPED MOSFETS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(03)
: 303
-
307
[4]
GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
FICHTNER, W
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(01):
: 2
-
4
[5]
THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
: 1696
-
1710
[6]
DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET
CHAO, CS
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
CHAO, CS
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
AKERS, LA
PATTANAYAK, DN
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
PATTANAYAK, DN
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(09)
: 851
-
860
[7]
A DYNAMIC AVERAGE MODEL FOR THE BODY EFFECT IN ION-IMPLANTED SHORT CHANNEL (L=1MU-META) MOSFETS
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
CHATTERJEE, PK
LEISS, JE
论文数:
0
引用数:
0
h-index:
0
LEISS, JE
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
TAYLOR, GW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(05)
: 606
-
607
[8]
DANG LM, 1979, IEEE T ELECTRON DEV, V26, P436
[9]
MEASUREMENT OF MOSFET CONSTANTS
DELAMONEDA, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
DELAMONEDA, FH
KOTECHA, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
KOTECHA, HN
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,FED SYST DIV,MANASSAS,VA 22110
SHATZKES, M
[J].
ELECTRON DEVICE LETTERS,
1982,
3
(01):
: 10
-
12
[10]
DEVICE MODELING
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
ENGL, WL
DIRKS, HK
论文数:
0
引用数:
0
h-index:
0
DIRKS, HK
MEINERZHAGEN, B
论文数:
0
引用数:
0
h-index:
0
MEINERZHAGEN, B
[J].
PROCEEDINGS OF THE IEEE,
1983,
71
(01)
: 10
-
33
←
1
2
3
→