A NEW APPROACH TO THE MODELING OF NONUNIFORMLY DOPED SHORT-CHANNEL MOSFETS

被引：16

作者：

RATNAM, P

SALAMA, CAT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1289 / 1298

页数：10

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