V-E DEPENDENCE IN SMALL-SIZED MOS-TRANSISTORS

被引：7

作者：

LEBURTON, JP ^{[1
]}

DORDA, GE ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,MUNICH,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期

关键词：

D O I：

10.1109/T-ED.1982.20852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1168 / 1171

页数：4

共 14 条

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[5]

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OTTAVIANI, G ;

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[8]

Klaassen F. M., 1977, Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design, P541

[9] ANALYTICAL APPROACH OF HOT-ELECTRON TRANSPORT IN SMALL SIZE MOSFETS [J].

LEBURTON, JP ;

GESCH, H ;

DORDA, G .

SOLID-STATE ELECTRONICS, 1981, 24 (08) :763-771

[10] REMOTE POLAR PHONON-SCATTERING FOR HOT-ELECTRONS IN SI-INVERSION LAYERS [J].

LEBURTON, JP ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1981, 40 (11) :1025-1026

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