High-quality indium oxide films at low substrate temperature

Low-resistivity (rho) and highly transparent pure indium oxide (In2O3) thin films grown on glass substrates by pulsed laser deposition at substrate temperature (T-s) between room temperature and 200 degrees C are reported. As-deposited films with resistivity (rho) of similar to 3 x 10(-4) Omega cm and transmittance (visible), above 87% were obtained within a narrow range of P-o2 (1 x 10(-2) - 1.5 x 10(-2) Torr). Hall effect measurements showed that the low rho resulted from the high carrier concentration (n) similar to 7 x 10(20) cm(-3), whereas modest Hall mobility (mu<45 cm(2) V-1 s(-1)) was measured. X-ray diffraction indicated that the films prepared at T-s less than or equal to 100 degrees C were amorphous, while at T-s greater than or equal to 150 degrees C polycrystalline films were obtained. (C) 1999 American Institute of Physics. [S0003-6951(99)03020-X].