Temperature-dependent surface diffusion parameters on amorphous materials

被引：15

作者：

Llera-Hurlburt, D ^{[1
]}

Dalton, AS ^{[1
]}

Seebauer, EG ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Roger Adams Lab 207, Urbana, IL 61801 USA

来源：

SURFACE SCIENCE | 2002年 / 504卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

silicon; amorphous surfaces; diffusion and migration; surface diffusion; computer simulations; models of surface kinetics;

D O I：

10.1016/S0039-6028(02)01106-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Diffusion on amorphous surfaces represents a little-studied physical phenomenon that controls several important kinds of material processing. To elucidate some general features of this phenomenon. we obtain Arrhenius parameters for the surface self-diffusion of amorphous silicon by measuring the formation kinetics of hemispherical grained silicon. Comparison with literature results suggests the existence of a significant temperature dependence in the activation energy and pre-exponential factor for total mass transport. We develop a physical model to show that this behavior should characterize diffusion on amorphous surfaces in general. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：244 / 252

页数：9

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