DC and low-frequency noise characteristics of SiGe p-channel FET's designed for 0.13-μm technology

被引：30

作者：

Okhonin, S ^{[1
]}

Py, MA

Georgescu, B

Fischer, H

Risch, L

机构：

[1] Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland

[2] Siemens AG, Corp Res & Dev, D-81739 Munich, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 07期

关键词：

D O I：

10.1109/16.772504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of hole confinement on the DC and low frequency noise in SiGe p-channel FET's is investigated by comparison with Si pFET's produced by the same technology. The relative spectral power density of low frequency (1/f) noise in SiGe pFET's is found to be significantly lower than in Si devices, This is mainly attributed to the physical separation of the holes confined in the SiGe channel from the Si/SiO2 interface, The low value of Sice channel noise proves the good quality of epilayers and heterointerfaces, as also revealed by TEM cross section.

引用

页码：1514 / 1517

页数：4

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