Oriented growth of Ge nanowires with diameters below the Bohr radius

被引：12

作者：

Chen, Xihong ^{[1
]}

Kim, Myung Hwa ^{[1
]}

Zhang, Xinzheng ^{[2
,3
]}

Larson, Christopher ^{[1
]}

Yu, Dapeng ^{[2
,3
]}

Wodtke, Alec M. ^{[1
]}

Moskovits, Martin ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Chem & Biochem, Santa Barbara, CA 93106 USA

[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Sch Phys, Elect Microscopy Lab, Beijing 100871, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 36期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/jp805498q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly symmetric self-organized arrays of germanium nanowires with average diameters of similar to 12 +/- 3 nm were produced by chemical vapor deposition. The nanowires grew epitaxially on the faces of single-crystal Ge microcrystals produced in the same synthesis. The epitaxial growth Occurred on several crystal faces with the resultant nanowire structure varying accordingly. The (111) growth direction was found to dominate, however. High-resolution TEM images of a system consisting of the NW and the substrate on which it grew epitaxially are also reported, specifically showing the interface between the two regions, thereby elucidating the growth mechanism.

引用

页码：13797 / 13800

页数：4

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