Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition

被引：73

作者：

Calixto, ME ^{[1
]}

Sebastian, PJ

Bhattacharya, RN

Noufi, R

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Solar H2 Fuel Cell Area, Temixco 62580, Morelos, Mexico

[2] NREL, Golden, CO USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 1-2期

关键词：

CIS; CIGS; thin films; film deposition;

D O I：

10.1016/S0927-0248(99)00033-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuInSe(2) (CIS) and Cu(In,Ga)Se(2) (CIGS) thin films were prepared by electrodeposition and processing. The influence of film deposition parameters such as bath composition, pH, deposition potential and material purity on film properties was studied. The structural, morphological, compositional and opto-electronic properties of electrodeposited and selenized CIS and CIGS thin films were characterized using various techniques. As-deposited as well as selenized films exhibited a compact or a granular morphology depending on the composition. The film stoichiometry was improved after selenization at 550 degrees C in a tubular furnace. The films are formed with a mixed phase composition of CuInSe(2) and CuIn(2)Se(3.5) ternary phases. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：75 / 84

页数：10

共 12 条

[1] SOLUTION GROWTH AND ELECTRODEPOSITED CULNSE2 THIN-FILMS [J].