A 10% Cu(In,Ga)Se2 based photovoltaic structure formed by electrodeposition and subsequent thermal processing

被引：10

作者：

Sebastian, PJ ^{[1
]}

Calixto, ME

Bhattacharya, RN

Noufi, R

机构：

[1] Univ Nacl Autonoma Mexico, Energy Res Ctr, Solar H2 Fuel Cell Grp, Temixco 62580, Morelos, Mexico

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 10期

关键词：

D O I：

10.1149/1.1838851

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CuIn1-xGaxSe2 (CIGS) thin films were formed from an electrodeposited CuInSe2 (CIS) precursor by thermal processing in vacuum in which the film stoichiometry was adjusted by adding In, Ga, and Se. The structure, composition, morphology and opto-electronic properties of the as-deposited and selenized CIS precursors were characterized by various techniques. A 10% CIGS based thin film solar cell was developed using the electrodeposited and thermally processed film. The cell structure consisted of Mo/CIGS/CdS/ZnO/MgF2. The cell parameters such as J(sc), V-oc, FF, and eta were determined from I-V characterization of the cell.

引用

页码：3613 / 3615

页数：3

共 12 条

[1] Electrodeposition of In-Se, Cu-Se, and Cu-In-Se thin films [J].