Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

被引：627

作者：

Lin, Yu-Chuan ^{[1
]}

Zhang, Wenjing ^{[1
]}

Huang, Jing-Kai ^{[1
,2
]}

Liu, Keng-Ku ^{[1
]}

Lee, Yi-Hsien ^{[1
]}

Liang, Chi-Te ^{[3
]}

Chu, Chih-Wei ^{[4
]}

Li, Lain-Jong ^{[1
,5
]}

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[5] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

NANOSCALE | 2012年 / 4卷 / 20期

关键词：

LARGE-AREA; ATOMIC LAYERS; GRAPHENE; PHOTOLUMINESCENCE; EXFOLIATION; TRANSISTORS; GROWTH;

D O I：

10.1039/c2nr31833d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 degrees C in hydrogen and sulfurization at 1000 degrees C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

引用

页码：6637 / 6641

页数：5

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