共 37 条
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
被引:1216
作者:

Radisavljevic, Branimir
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机构:
Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland

Whitwick, Michael Brian
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h-index: 0
机构:
Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland

Kis, Andras
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h-index: 0
机构:
Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland
机构:
[1] Ecole Polytech Fed Lausanne, Inst Elect Engn, Lausanne, Switzerland
来源:
基金:
欧洲研究理事会;
关键词:
two-dimensional materials;
dichalcogenides;
MoS2;
nanoelectronic devices;
logic circuits;
digital electronics;
FIELD-EFFECT TRANSISTORS;
STRAINED-SILICON;
GRAPHENE;
TRANSPORT;
CRYSTALS;
D O I:
10.1021/nn203715c
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS2 represent the ultimate limit of miniaturization in the vertical dimension, are Interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS2. Our Integrated circuits are capable of operating as Inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS2 transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.
引用
收藏
页码:9934 / 9938
页数:5
相关论文
共 37 条
[1]
Visibility of dichalcogenide nanolayers
[J].
Benameur, M. M.
;
Radisavljevic, B.
;
Heron, J. S.
;
Sahoo, S.
;
Berger, H.
;
Kis, A.
.
NANOTECHNOLOGY,
2011, 22 (12)

Benameur, M. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland

Radisavljevic, B.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland

Heron, J. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland

Sahoo, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland

Berger, H.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Basic Sci, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland

Kis, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Sch Engn, Inst Elect Engn, CH-1015 Lausanne, Switzerland
[2]
The high-k solution
[J].
Bohr, Mark T.
;
Chau, Robert S.
;
Ghani, Tahir
;
Mistry, Kaizad
.
IEEE SPECTRUM,
2007, 44 (10)
:29-35

Bohr, Mark T.
论文数: 0 引用数: 0
h-index: 0
机构: Intel

Chau, Robert S.
论文数: 0 引用数: 0
h-index: 0
机构: Intel

Ghani, Tahir
论文数: 0 引用数: 0
h-index: 0
机构: Intel

Mistry, Kaizad
论文数: 0 引用数: 0
h-index: 0
机构: Intel
[3]
Ultrahigh electron mobility in suspended graphene
[J].
Bolotin, K. I.
;
Sikes, K. J.
;
Jiang, Z.
;
Klima, M.
;
Fudenberg, G.
;
Hone, J.
;
Kim, P.
;
Stormer, H. L.
.
SOLID STATE COMMUNICATIONS,
2008, 146 (9-10)
:351-355

Bolotin, K. I.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Sikes, K. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Jiang, Z.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA
Natl High Magnet Field Lab, Tallahassee, FL 32310 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Klima, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Mech Engn, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Fudenberg, G.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Hone, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Mech Engn, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Kim, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Stormer, H. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA
Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
Alcatel Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA Columbia Univ, Dept Phys, New York, NY 10027 USA
[4]
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
[J].
Coleman, Jonathan N.
;
Lotya, Mustafa
;
O'Neill, Arlene
;
Bergin, Shane D.
;
King, Paul J.
;
Khan, Umar
;
Young, Karen
;
Gaucher, Alexandre
;
De, Sukanta
;
Smith, Ronan J.
;
Shvets, Igor V.
;
Arora, Sunil K.
;
Stanton, George
;
Kim, Hye-Young
;
Lee, Kangho
;
Kim, Gyu Tae
;
Duesberg, Georg S.
;
Hallam, Toby
;
Boland, John J.
;
Wang, Jing Jing
;
Donegan, John F.
;
Grunlan, Jaime C.
;
Moriarty, Gregory
;
Shmeliov, Aleksey
;
Nicholls, Rebecca J.
;
Perkins, James M.
;
Grieveson, Eleanor M.
;
Theuwissen, Koenraad
;
McComb, David W.
;
Nellist, Peter D.
;
Nicolosi, Valeria
.
SCIENCE,
2011, 331 (6017)
:568-571

Coleman, Jonathan N.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Lotya, Mustafa
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

O'Neill, Arlene
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Bergin, Shane D.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

King, Paul J.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Khan, Umar
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Young, Karen
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Gaucher, Alexandre
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

De, Sukanta
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Smith, Ronan J.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Shvets, Igor V.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Arora, Sunil K.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Stanton, George
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Kim, Hye-Young
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Trinity Coll Dublin, Sch Chem, Dublin D2, Ireland
Korea Univ, Sch Elect Engn, Seoul, South Korea Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Lee, Kangho
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Trinity Coll Dublin, Sch Chem, Dublin D2, Ireland
Korea Univ, Sch Elect Engn, Seoul, South Korea Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

论文数: 引用数:
h-index:
机构:

Duesberg, Georg S.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Trinity Coll Dublin, Sch Chem, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Hallam, Toby
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Trinity Coll Dublin, Sch Chem, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Boland, John J.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, CRANN, Dublin D2, Ireland
Trinity Coll Dublin, Sch Chem, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Wang, Jing Jing
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Donegan, John F.
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland
Trinity Coll Dublin, CRANN, Dublin D2, Ireland Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Grunlan, Jaime C.
论文数: 0 引用数: 0
h-index: 0
机构:
Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Moriarty, Gregory
论文数: 0 引用数: 0
h-index: 0
机构:
Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Shmeliov, Aleksey
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Oxford, Dept Mat, Oxford OX1 3PH, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Nicholls, Rebecca J.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Oxford, Dept Mat, Oxford OX1 3PH, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Perkins, James M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Grieveson, Eleanor M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Oxford, Dept Mat, Oxford OX1 3PH, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

论文数: 引用数:
h-index:
机构:

McComb, David W.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

Nellist, Peter D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Oxford, Dept Mat, Oxford OX1 3PH, England Trinity Coll Dublin, Sch Phys, Dublin D2, Ireland

论文数: 引用数:
h-index:
机构:
[5]
Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
[J].
Du, Xu
;
Skachko, Ivan
;
Duerr, Fabian
;
Luican, Adina
;
Andrei, Eva Y.
.
NATURE,
2009, 462 (7270)
:192-195

Du, Xu
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA

Skachko, Ivan
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA

Duerr, Fabian
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA

Luican, Adina
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA

Andrei, Eva Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA
[6]
High-performance thin-film transistors using semiconductor nanowires and nanoribbons
[J].
Duan, XF
;
Niu, CM
;
Sahi, V
;
Chen, J
;
Parce, JW
;
Empedocles, S
;
Goldman, JL
.
NATURE,
2003, 425 (6955)
:274-278

Duan, XF
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Niu, CM
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Sahi, V
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Chen, J
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Parce, JW
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Empedocles, S
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA

Goldman, JL
论文数: 0 引用数: 0
h-index: 0
机构: Nanosys Inc, Adv Res Ctr, Medford, MA 02155 USA
[7]
PHYSICAL PROPERTIES OF LAYER STRUCTURES - OPTICAL PROPERTIES AND PHOTOCONDUCTIVITY OF THIN CRYSTALS OF MOLYBDENUM DISULPHIDE
[J].
FRINDT, RF
;
YOFFE, AD
.
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES,
1963, 273 (1352)
:69-+

FRINDT, RF
论文数: 0 引用数: 0
h-index: 0

YOFFE, AD
论文数: 0 引用数: 0
h-index: 0
[8]
SINGLE CRYSTALS OF MOS2 SEVERAL MOLECULAR LAYERS THICK
[J].
FRINDT, RF
.
JOURNAL OF APPLIED PHYSICS,
1966, 37 (04)
:1928-&

FRINDT, RF
论文数: 0 引用数: 0
h-index: 0
[9]
Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm
[J].
Gomez, Leonardo
;
Aberg, I.
;
Hoyt, J. L.
.
IEEE ELECTRON DEVICE LETTERS,
2007, 28 (04)
:285-287

Gomez, Leonardo
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

Aberg, I.
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

Hoyt, J. L.
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
[10]
Energy band-gap engineering of graphene nanoribbons
[J].
Han, Melinda Y.
;
Oezyilmaz, Barbaros
;
Zhang, Yuanbo
;
Kim, Philip
.
PHYSICAL REVIEW LETTERS,
2007, 98 (20)

Han, Melinda Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

论文数: 引用数:
h-index:
机构:

Zhang, Yuanbo
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

Kim, Philip
论文数: 0 引用数: 0
h-index: 0
机构: Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA