Comparative study of solution-processed carbon nanotube network transistors

被引：30

作者：

Choi, Sung-Jin ^{[1
]}

Wang, Chuan ^{[1
]}

Lo, Cheuk Chi ^{[1
]}

Bennett, Patrick ^{[1
]}

Javey, Ali ^{[1
]}

Bokor, Jeffrey ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; RADIOFREQUENCY APPLICATIONS; INTEGRATED-CIRCUITS; ALIGNED ARRAYS; ELECTRONICS; PERFORMANCE; SENSORS; SCALE;

D O I：

10.1063/1.4752006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nanotube networks in thin-film type transistors were studied experimentally, comparing the use of pre-separated semiconducting enriched nanotubes (90% and 99% purity) to examine how topology affects the properties of the devices. Measurements are reported for two deposition methods used for network formation: random and spin-aligned deposition methods. The results show that the thin-film transistors fabricated via spin-aligned deposition demonstrate better electrical uniformity and performance than those produced by the random network deposition method. Our results imply that coverage and alignment are strongly correlated with the properties of the devices and should therefore be simultaneously optimized for improved electrical uniformity and performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752006]

引用

页数：4

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