Electronic properties of ferroelectric SrBi2Ta2O9, SrBi2Nb2O9, and PbBi2Nb2O9 with optimized structures

被引:55
作者
Miura, K [1 ]
机构
[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400005, Japan
关键词
D O I
10.1063/1.1474607
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic properties of ferroelectric SrBi2Ta2O9 (SBT) SrBi2Nb2O9 (SBN) and PbBi2Nb2O9 (PBN) have been investigated using a first-principles calculational method with optimized structures. In optimized SBT, the displacement of Ta in TaO6 octahedra is small, while the displacement of Nb in NbO6 octahedra is larger in optimized SBN. In optimized PBN, on the other hand, due to the hybridization between Pb 6s and O 2p, the displacement of NbO6 octahedra is larger than that in SBN. (C) 2002 American Institute of Physics.
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页码:2967 / 2969
页数:3
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