Gold-induced faceting on an Si(hhm) surface (m/h=1.4-1.5) studied by spot profile analyzing low-energy electron diffraction

被引：20

作者：

Minoda, H ^{[1
]}

Shimakura, T

Yagi, K

Heringdorf, FJM

von Hoegen, MH

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

[2] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

来源：

SURFACE SCIENCE | 1999年 / 432卷 / 1-2期

关键词：

adsorption; Au; faceting; high index surface; Si; step bunching;

D O I：

10.1016/S0039-6028(99)00516-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Au-induced faceting on an Si(hhm) surface (m/h = 1.4-1.5) was studied by in situ high-resolution low energy electron diffraction at 750 degrees C and 800 degrees C. Au adsorption modifies surface morphology and (557), (556), (335), (5511), (113), (225) and (111) facets were formed at 750 degrees C. The facet orientation depends on Au coverage and temperature and changes of the surface free energy due to the change of Au coverage trigger the transformation of the initial Si(hhm) surface into the hill-and-valley structures. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：69 / 80

页数：12

共 20 条

[1] REM studies of adsorption-induced phase transitions and faceting in the Si(111)-Au system [J].