Step arrangement control of vicinal Si(001) by Ag adsorption

被引：21

作者：

Meier, A ^{[1
]}

Zahl, P ^{[1
]}

Vockenroth, R ^{[1
]}

Horn-von Hoegen, MH ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00431-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Upon adsorption of Ag on 4 degrees vicinal Si(001) the existing double steps form bunches with multiple step heights separated by flat (001) terraces. The step rearrangement is completely reversible and can be controlled by the adsorption temperature. Below 550 degrees C an extremely regular array of 4-fold steps results. At higher temperatures the formation of a mixture of (115)- and (117)-facets, composed of up to 25 double steps has been observed. Using this method a regular series of flat and straight (001) terraces with an temperature controlled width of up to 100 nm could be generated. (C) 1998 Elsevier Science B.V.

引用

页码：694 / 698

页数：5

共 12 条

[1] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[2] RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001) [J].

FOLSCH, S ;

MEYER, G ;

WINAU, D ;

RIEDER, KH ;

HORNVONHOEGEN, M ;

SCHMIDT, T ;

HENZLER, M .

PHYSICAL REVIEW B, 1995, 52 (19) :13745-13748

[3]

FOLSCH S, 1995, APPL PHYS LETT, V67, P2185, DOI 10.1063/1.115097

[4] ATOMIC STEPS ON SINGLE-CRYSTALS - EXPERIMENTAL METHODS AND PROPERTIES [J].

HENZLER, M .

APPLIED PHYSICS, 1976, 9 (01) :11-17

[5] AG ON SI(001) - GROWTH-BEHAVIOR OF THE ANNEALED SURFACE [J].

LIN, XF ;

WAN, KJ ;

NOGAMI, J .

PHYSICAL REVIEW B, 1993, 47 (16) :10947-10950

[6] SYMMETRY, STRUCTURE, AND STEP INDUCED ORDERING OF THE SI(001)-(2X3)AG SURFACE [J].

MICHELY, T ;

REUTER, MC ;

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1994, 73 (15) :2095-2098

[7]

MICHELY T, COMMUNICATION

[8] SCANNING-TUNNELING-MICROSCOPY STUDIES OF AG ON SI(100)-(2X1) [J].

SAMSAVAR, A ;

HIRSCHORN, ES ;

LEIBSLE, FM ;

CHIANG, TC .

PHYSICAL REVIEW LETTERS, 1989, 63 (26) :2830-2833

[9] A NEW LEED INSTRUMENT FOR QUANTITATIVE SPOT PROFILE ANALYSIS [J].

SCHEITHAUER, U ;

MEYER, G ;

HENZLER, M .

SURFACE SCIENCE, 1986, 178 (1-3) :441-451

[10] THE INITIAL-STAGES OF GROWTH OF SILICON ON SI(111) BY SLOW POSITRON-ANNIHILATION LOW-ENERGY ELECTRON-DIFFRACTION [J].

VONHOEGEN, MH ;

FALTA, J ;

HENZLER, M .

THIN SOLID FILMS, 1989, 183 :213-220

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