THE INITIAL-STAGES OF GROWTH OF SILICON ON SI(111) BY SLOW POSITRON-ANNIHILATION LOW-ENERGY ELECTRON-DIFFRACTION

被引：51

作者：

VONHOEGEN, MH ^{[1
]}

FALTA, J ^{[1
]}

HENZLER, M ^{[1
]}

机构：

[1] UNIV HANOVER,INST FESTKORPERPHYS,W-3000 HANOVER,GERMANY

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90446-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：213 / 220

页数：8

共 14 条

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[6]

HORN B, 1988, J VAC SCI TECHNOL B, V6, P727

[7] LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111) [J].

HORN, M ;

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[8]

HORN M, 1988, THESIS HANNOVER

[9]

KNIBB MG, 1988, PHYSICS, V18, P43

[10]

KOHLER U, 1989, J VAC SCI TECHNOL A, V7, P2860, DOI 10.1116/1.576159

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