Ag-mediated step-bunching instability on vicinal Si(100)

被引:22
作者
Folsch, S
Meyer, G
Rieder, KH
Horn-von Hoegen, M
Schmidt, T
Henzler, M
机构
[1] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany
[2] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
关键词
electron-solid diffraction; low energy electron diffraction (LEED); scanning tunnelling microscopy; silicon; silver; single crystal surfaces; surface structure; morphology; roughness; and topography; vicinal single crystal surfaces;
D O I
10.1016/S0039-6028(97)00589-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silver-mediated multistep formation on vicinal Si(100)-(2x1) is investigated by spot profile-analysing-low-energy electron diffraction and scanning tunnelling microscopy. The employed 4 degrees-miscut of the sample towards [110] leads to a single domain substrate with smooth and equidistant double steps. Surface reconstruction and step structure of the vicinal are altered drastically upon submonolayer adsorption of Ag at similar to 700 K: a (3 x 2) superstructure is formed which is characterised by an anisotropic interaction with steps, thus preserving the single domain character of the surface. Furthermore, pronounced step-bunching leads to the formation of a regular array of multiple double steps with preference For sixfold step height. It is supposed that the attempt to lower surface stress is the driving force for this step-bunching instability. As a general feature of the restructured step topography, the long-range order of lateral step positions is not affected, i.e. the vicinal remains Bat with respect to the macroscopic surface orientation. Finally, the experimental results are verified by comparative numerical simulations of the diffracted intensity I(k(perpendicular to), k(parallel to)). (C) 1997 Elsevier Science B.V.
引用
收藏
页码:60 / 70
页数:11
相关论文
共 37 条
  • [1] ARSENIC-TERMINATED SILICON AND GERMANIUM SURFACES STUDIED BY SCANNING TUNNELLING MICROSCOPY
    BECKER, RS
    KLITSNER, T
    VICKERS, JS
    [J]. JOURNAL OF MICROSCOPY-OXFORD, 1988, 152 : 157 - 165
  • [2] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
  • [3] Anisotropic inter-action of Ag-induced missing dimer vacancies on Si(001) surfaces
    Chang, CS
    Huang, YM
    Chen, CC
    Tsong, TT
    [J]. SURFACE SCIENCE, 1996, 367 (01) : L8 - L12
  • [4] FABRICATION OF MAGNETIC QUANTUM WIRES BY STEP-FLOW GROWTH OF COBALT ON COPPER SURFACES
    DELAFIGUERA, J
    HUERTAGARNICA, MA
    PRIETO, JE
    OCAL, C
    MIRANDA, R
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (08) : 1006 - 1008
  • [5] RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001)
    FOLSCH, S
    MEYER, G
    WINAU, D
    RIEDER, KH
    HORNVONHOEGEN, M
    SCHMIDT, T
    HENZLER, M
    [J]. PHYSICAL REVIEW B, 1995, 52 (19): : 13745 - 13748
  • [6] FOLSCH S, 1995, APPL PHYS LETT, V67, P2185, DOI 10.1063/1.115097
  • [7] TUNNELING MICROSCOPY OF STEPS ON VICINAL GE(001) AND SI(001) SURFACES
    GRIFFITH, JE
    KUBBY, JA
    WIERENGA, PE
    BECKER, RS
    VICKERS, JS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 493 - 496
  • [8] Henzler M., 1977, Electron spectroscopy for surface analysis, P117
  • [9] CHEMISORPTION OF H, H2O AND C2H4 ON SI(113) - IMPLICATIONS FOR THE STRUCTURE
    JACOBI, K
    MYLER, U
    [J]. SURFACE SCIENCE, 1993, 284 (03) : 223 - 235
  • [10] DIFFUSE LEED INTENSITIES OF DISORDERED CRYSTAL-SURFACES .1. CORRELATIONS BETWEEN STATISTICS AND MULTIPLE DIFFRACTION
    JAGODZINSKI, H
    MORITZ, W
    WOLF, D
    [J]. SURFACE SCIENCE, 1978, 77 (02) : 233 - 248