Anisotropic inter-action of Ag-induced missing dimer vacancies on Si(001) surfaces

被引：14

作者：

Chang, CS

Huang, YM

Chen, CC

Tsong, TT

机构：

[1] Institute of Physics, Academia Sinica, Nankang, Taipei

来源：

SURFACE SCIENCE | 1996年 / 367卷 / 01期

关键词：

dimer vacancy; dimer vacancy line; scanning tunneling microscopy (STM); surface stress;

D O I：

10.1016/S0039-6028(96)00996-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ag-induced missing dimer vacancies on Si(001)2 x 1 surfaces are shown to form vacancy lines when the vacancy concentration is larger than similar to 10%. The formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. The form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines.

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收藏

页码：L8 / L12

页数：5

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