THE EFFECT OF SURFACE ANISOTROPY OF SI(001)2X1 ON HOLLOW FORMATION IN THE INITIAL-STAGE OF OXIDATION AS STUDIED BY REFLECTION ELECTRON-MICROSCOPY

被引：33

作者：

KAHATA, H

YAGI, K

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(89)90467-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：131 / 136

页数：6

共 8 条

[1] ASPES DE, 1986, PHYS REV LETT, V57, P3054
[2] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
[3] UHV-REM STUDY OF CHANGES IN THE STEP STRUCTURES ON CLEAN (100) SILICON SURFACES BY ANNEALING
INOUE, N
TANISHIRO, Y
YAGI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (04): : L293 - L295
[4] KAHATAQ H, IN PRESS JAPAN J APP
[5] BIATOMIC LAYER-HIGH STEPS ON SI(001)2X1 SURFACE
NAKAYAMA, T
TANISHIRO, Y
TAKAYANAGI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L280 - L282
[6] MONOLAYER AND BILAYER HIGH STEPS ON SI(001)2X1 VICINAL SURFACE
NAKAYAMA, T
TANISHIRO, Y
TAKAYANAGI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1186 - L1188
[7] ON THE VACANCY FORMATION AND DIFFUSION ON THE SI(111)7 X 7 SURFACES UNDER EXPOSURES OF LOW OXYGEN-PRESSURE STUDIED BY INSITU REFLECTION ELECTRON-MICROSCOPY
SHIMIZU, N
TANISHIRO, Y
TAKAYANAGI, K
YAGI, K
[J]. SURFACE SCIENCE, 1987, 191 (1-2) : 28 - 44
[8] TUNNELING IMAGES OF BIATOMIC STEPS ON SI(001)
WIERENGA, PE
KUBBY, JA
GRIFFITH, JE
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (19) : 2169 - 2172