Low-concentration NO2 detection with an adsorption porous silicon FET

被引:26
作者
Barillaro, G [1 ]
Diligenti, A
Nannini, A
Strambini, LM
Comini, E
Sberveglieri, G
机构
[1] Univ Pisa, Dipartimento Ingn Informaz, Pisa, Italy
[2] INFM, SENSOR Lab, I-25133 Brescia, Italy
关键词
FET device; NO2; sensor; porous silicon (PS); thermal oxidation;
D O I
10.1109/JSEN.2005.859360
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO2 detection by using the APSFET is demonstrated for the first time. NO2 concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.
引用
收藏
页码:19 / 23
页数:5
相关论文
共 21 条
[1]   TUNGSTEN OXIDE-BASED SEMICONDUCTOR SENSOR HIGHLY SENSITIVE TO NO AND NO2 [J].
AKIYAMA, M ;
TAMAKI, J ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1991, (09) :1611-1614
[2]   APSFET: a new, porous silicon-based gas sensing device [J].
Barillaro, G ;
Nannini, A ;
Pieri, F .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 93 (1-3) :263-270
[3]  
BARILLARO G, 2003, SENSOR ACTUAT B-CHEM, V100, P185
[4]   NO2 monitoring at room temperature by a porous silicon gas sensor [J].
Boarino, L ;
Baratto, C ;
Geobaldo, F ;
Amato, G ;
Comini, E ;
Rossi, AM ;
Faglia, G ;
Lérondel, G ;
Sberveglieri, G .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :210-214
[5]  
BOARINO L, 2001, PHYS REV B, V64, P205
[6]   Metallophthalocyanine coated porous silicon gas sensor selective to NO2 [J].
Chakane, S ;
Gokarna, A ;
Bhoraskar, SV .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 92 (1-2) :1-5
[7]  
Faglia G, 1996, SENSOR MATER, V8, P239
[8]  
HARPER J, 1996, ANAL CHEM, V68, P713
[9]  
ISHIHARA T, 1989, SENSOR ACTUATOR, V19, P256
[10]   Stabilized zirconia-based sensors using WO3 electrode for detection of NO or NO2 [J].
Lu, G ;
Miura, N ;
Yamazoe, N .
SENSORS AND ACTUATORS B-CHEMICAL, 2000, 65 (1-3) :125-127