APSFET: a new, porous silicon-based gas sensing device

被引：61

作者：

Barillaro, G ^{[1
]}

Nannini, A ^{[1
]}

Pieri, F ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informazione, I-56126 Pisa, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期

关键词：

gas sensor; porous silicon; polar molecules; alcohols; organic acids;

D O I：

10.1016/S0925-4005(03)00234-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, a new sensing device based on a FET structure having a PoSi layer as sensing material, namely adsorption porous silicon-based FET (APSFET), is proposed. The sensing mechanism is based on an gas-induced conduction channel in the crystalline silicon under the sensing layer, a new approach with respect to previously reported PoSi sensors. The fabrication process is based on a standard silicon process. In this work, the fabrication process along with an electrical characterization of the device in presence of different organic vapors (alcohols and acids) is presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 270

页数：8

共 18 条

[1] Front-side micromachined porous silicon nitrogen dioxide gas sensor [J].