Front-side micromachined porous silicon nitrogen dioxide gas sensor

被引：54

作者：

Baratto, C

Faglia, G

Sberveglieri, G

Boarino, L

Rossi, AM

Amato, G

机构：

[1] Univ Brescia, INFM, I-25133 Brescia, Italy

[2] Univ Brescia, Dept Chem & Phys, I-25133 Brescia, Italy

[3] Ist Elettrotecn Nazl Galileo Ferraris, Thin Film Lab, I-10135 Turin, Italy

来源：

THIN SOLID FILMS | 2001年 / 391卷 / 02期

关键词：

nitrogen dioxide; porous silicon; gas sensor; front side micromachining;

D O I：

10.1016/S0040-6090(01)00992-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper a new C-MOS compatible fabrication process is presented for a nitrogen dioxide porous silicon (PS) sensor. Electrically insulated PS sensing layers and even free-standing PS membranes have been obtained by front side electrochemical micromachining, reducing in this way electrical leakage towards the crystalline substrate. The electrical behavior of the device in a controlled environment was measured by means of a volt-amperometric technique at constant bias. A huge variation of the current was detected at RT for NO2 concentrations as low as 200 ppb (DeltaG/G = 111). The interference of humidity, ethanol, methanol, CO and ozone is also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 264

页数：4

共 18 条

[1]

BARATTO C, 2000, P 8 INT M CHEM SENS, P131

[2]

Berger M. G., 1997, OPTICAL STRUCTURAL P, P557

[3] Sensors on low-dimensional silicon structures [J].