Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

被引：19

作者：

Barillaro, G

Diligenti, A

Pieri, F

Fuso, F

Allegrini, M

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56126 Pisa, Italy

[2] Univ Pisa, Dipartimento Fis Enrico Fermi, INFM, I-56127 Pisa, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期

关键词：

D O I：

10.1063/1.1381572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n(+)/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. (C) 2001 American Institute of Physics.

引用

页码：4154 / 4156

页数：3

共 10 条

[1] A model of radiative recombination in n-type porous silicon-aluminum Schottky junction [J].

Balucani, M ;

Bondarenko, V ;

Franchina, L ;

Lamedica, G ;

Yakovtseva, VA ;

Ferrari, A .

APPLIED PHYSICS LETTERS, 1999, 74 (14) :1960-1962

[2] About the origin and the mechanisms involved in the cracking of highly porous silicon layers under capillary stresses [J].

Belmont, O ;

Faivre, C ;

Bellet, D ;

Brechet, Y .

THIN SOLID FILMS, 1996, 276 (1-2) :219-222

[3] Stable photoluminescence and electroluminescence from porous silicon [J].

Fauchet, PM ;

Tsybeskov, L ;

Duttagupta, SP ;

Hirschman, KD .

THIN SOLID FILMS, 1997, 297 (1-2) :254-260

[4] Fabrication of single-crystal Si microstructures by anodization [J].

Higa, K ;

Asano, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6648-6651

[5] Frontside bulk silicon micromachining using porous-silicon technology [J].

Kaltsas, G ;

Nassiopoulou, AG .

SENSORS AND ACTUATORS A-PHYSICAL, 1998, 65 (2-3) :175-179

[6]

LANG W, 1997, STRUCTURLA OPTICAL P, P539

[7] Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device [J].

Lazarouk, S ;

Jaguiro, P ;

Katsouba, S ;

Masini, G ;

LaMonica, S ;

Maiello, G ;

Ferrari, A .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2108-2110

[8] High external quantum efficiency of electroluminescence from photoanodized porous silicon [J].

Nishimura, K ;

Nagao, Y ;

Ikeda, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L303-L305

[9] Porous silicon n-p light emitting diode [J].

Pavesi, L ;

Guardini, R ;

Bellutti, P .

THIN SOLID FILMS, 1997, 297 (1-2) :272-276

[10]

Walker J. A., 1990, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (Cat. No.90CH2832-4), P56, DOI 10.1109/MEMSYS.1990.110248

← 1 →