Frontside bulk silicon micromachining using porous-silicon technology

被引：69

作者：

Kaltsas, G ^{[1
]}

Nassiopoulou, AG ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 65卷 / 2-3期

关键词：

bulk silicon micromachining; porous-silicon technology;

D O I：

10.1016/S0924-4247(97)01669-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous-silicon technology is successfully used for frontside bulk silicon micromachining in a process which is fully C-MOS compatible. Porous silicon is used as a sacrificial layer and it is removed by C-MOS-compatible chemicals, leaving a very smooth bottom surface and sidewalls. Deep trenches, bridges with suspended membranes and cantilevers are formed, which open new possibilities in monolithic integration of sensors with electronics. Cavities as deep as similar to 120 mu m and suspended polysilicon membranes with a flat surface as large as 230 mu m X 550 mu m have been fabricated by this process. Also other micromechanical structures such as very flat polysilicon cantilevers of dimensions 150 mu m X 2 mu m X 2 mu m are easily obtained after optimization of the process in order to minimize the strain within the polysilicon films. (C) 1998 Elsevier Science S.A.

引用

页码：175 / 179

页数：5

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