High external quantum efficiency of electroluminescence from photoanodized porous silicon

被引：23

作者：

Nishimura, K ^{[1
]}

Nagao, Y ^{[1
]}

Ikeda, N ^{[1
]}

机构：

[1] KDD R&D Labs, Kamifukuoka, Saitama 356, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 3B期

关键词：

porous silicon; light emitting diode; photoanodization; external quantum efficiency; series resistance;

D O I：

10.1143/JJAP.37.L303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon (PS) light emitting diodes (LEDs) were fabricated from p(+)n Si wafers by photoanodization. The maximum external quantum efficiency (eta(ext)) of electroluminescence (EL) from PS-LED up to 0.8%, which is the highest ever reported for PS-LEDs with solid state contact, was achieved under pulsed operation with 1% duty in ambient air. However, we found that PS-LED with a high eta(ext) was accompanied by the problem of high series resistance.

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页码：L303 / L305

页数：3

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