Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device

被引：83

作者：

Lazarouk, S ^{[1
]}

Jaguiro, P ^{[1
]}

Katsouba, S ^{[1
]}

Masini, G ^{[1
]}

LaMonica, S ^{[1
]}

Maiello, G ^{[1
]}

Ferrari, A ^{[1
]}

机构：

[1] UNIV ROMA LA SAPIENZA, DIPARTIMENTO INGN ELETTRON, IST NAZL FIS NUCL, I-00184 ROME, ITALY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 15期

关键词：

D O I：

10.1063/1.115600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum-porous silicon junction. White light, visible in normal daylight, is emitted when a reverse bias is applied to the device, promoting the junction breakdown. The device has a fast (100 ns) rise time of the light emission. An excellent stability, tested over more than one month of continuous operation at a high bias level, is achieved by the complete encapsulation of the active porous silicon under a transparent alumina layer. The external power efficiency of light emission is 0.01%. (C) 1996 American Institute of Physics.

引用

页码：2108 / 2110

页数：3

共 10 条

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