A model of radiative recombination in n-type porous silicon-aluminum Schottky junction

被引：7

作者：

Balucani, M ^{[1
]}

Bondarenko, V ^{[1
]}

Franchina, L ^{[1
]}

Lamedica, G ^{[1
]}

Yakovtseva, VA ^{[1
]}

Ferrari, A ^{[1
]}

机构：

[1] Univ Rome La Sapienza, Dept Elect, INFM, Unit E6, I-00184 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 14期

关键词：

D O I：

10.1063/1.123741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon-aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction. (C) 1999 American Institute of Physics. [S0003-6951(99)02314-1].

引用

页码：1960 / 1962

页数：3

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